THERMAL DOPING BY VACANCY FORMATION IN NANOCRYSTALS,申请号EP20140755920-传众专利搜索

发明名称	THERMAL DOPING BY VACANCY FORMATION IN NANOCRYSTALS
摘要	The invention generally relates to methods of thermal doping by vacancy formation in nanocrystals, devices and uses thereof.
申请公布号	EP3011596(A1)	申请公布日期	2016.04.27
申请号	EP20140755920	申请日期	2014.07.10
申请人	YISSUM RESEARCH AND DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD.	发明人	BANIN, URI;VINOKUROV, KATHY;MILLO, ODED;BEKENSTEIN, YEHONADAV
分类号	H01L29/24;H01L21/477;H01L29/06	主分类号	H01L29/24
代理机构		代理人
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