SILICON SURFACE ETCHING METHOD AND SEED LAYER FORMING METHOD

摘要

The present invention relates to a silicon surface etching method which is capable of eliminating a removal process of a metal catalyst. The method includes: a first step of distributing and locating a metal nanoparticle on a silicon substrate; and a second step of etching a portion of the metal nanoparticle contacting the silicon substrate to form a crater structure on the surface of the silicon substrate through chemically etching by a catalyst effect of the metal nanoparticle. The metal nanoparticle dissolves during the forming process of the crater structure in the second step, thereby forming the crater structure having a depth equal to or less than a predetermined depth. Herein, the metal nanoparticle preferably includes a copper nanoparticle. The present invention can omit an extra processing which is a process of removing a metal catalyst, while performing chemical etching by using the metal nanoparticle, and be applied as a fundamental process in various manufacturing processes.