| 发明名称 | Storage element, memory and electronic apparatus | ||
| 摘要 | A storage element is provided. The storage element includes a memory layer having a first magnetization state of a first material; a fixed magnetization layer having a second magnetization state of a second material; an intermediate layer including a nonmagnetic material and provided between the memory layer and the fixed magnetization layer; wherein the first material includes Co—Fe—B alloy, and at least one of a non-magnetic metal and an oxide. | ||
| 申请公布号 | US9324940(B2) | 申请公布日期 | 2016.04.26 |
| 申请号 | US201514943781 | 申请日期 | 2015.11.17 |
| 申请人 | Sony Corporation | 发明人 | Yamane Kazutaka;Hosomi Masanori;Ohmori Hiroyuki;Bessho Kazuhiro;Higo Yutaka;Uchida Hiroyuki |
| 分类号 | G11C11/00;H01L43/10 | 主分类号 | G11C11/00 |
| 代理机构 | K&L Gates LLP | 代理人 | K&L Gates LLP |
| 主权项 | 1. A storage element comprising: a memory layer having a first magnetization state of a first material; a fixed magnetization layer having a second magnetization state of a second material; an intermediate layer including a nonmagnetic material and provided between the memory layer and the fixed magnetization layer; wherein the first material includes Co—Fe—B alloy, and at least one of a non-magnetic metal and an oxide. | ||
| 地址 | Tokyo JP | ||