发明名称 SEMICONDUCTOR DEVICE, MODULE, AND ELECTRONIC DEVICE
摘要 Provided is a transistor defying a deformation. Alternatively, provided is a transistor entailing little electrical characteristic abnormality. Alternatively, provided is a transistor with a high withstand voltage. A semiconductor device includes a first conductor, a second conductor, a first semiconductor, a second semiconductor, a third semiconductor, and an insulator. The second semiconductor has a region in contact with an upper surface of the first semiconductor. The first conductor has a region where the first conductor and the second semiconductor are superposed. The insulator is arranged between the first conductor and the first semiconductor. The second conductor has a region in contact with an upper surface of the second semiconductor, and the third semiconductor has a region in contact with the upper surface of the first semiconductor, the upper surface of the second semiconductor, and an upper surface of the second conductor.
申请公布号 KR20160045013(A) 申请公布日期 2016.04.26
申请号 KR20150141997 申请日期 2015.10.12
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA TETSUHIRO;TANEMURA KAZUKI
分类号 H01L29/786;H01L21/02 主分类号 H01L29/786
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