| 主权项 |
1. A semiconductor device, comprising:
a semiconductor layer formed above a substrate; an insulating film formed on the semiconductor layer; and an electrode formed on the insulating film, wherein the electrode is a gate electrode, wherein the semiconductor layer includes a first semiconductor layer and a second semiconductor layer formed above the first semiconductor layer, wherein the insulating film includes a first insulating film and a second insulating film formed on the first insulating film, wherein a concentration of any one of nitrogen, oxygen, hydrogen and fluorine included in the first insulating film is higher than the concentration included in the second insulating film to cause the first insulating film to have a lower membrane stress than the second insulating film, wherein the first insulating film having a higher concentration of any one of nitrogen, oxygen, hydrogen, and fluorine than the second insulating film directly contacts the semiconductor layer, wherein the semiconductor device has a source electrode and a drain electrode formed in contact with the first semiconductor layer or the second semiconductor layer, and wherein the insulating film is formed by an amorphous film, wherein carbon is a chief ingredient of the amorphous film. |
