发明名称 Image sensors with reduced stack height
摘要 An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. The image sensor die may be a backside illuminated image sensor die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. Bond pad structures may be formed on the surface of the image sensor die and may be coupled to off-chip circuitry via bonding wires soldered to the bad pad structures. Color filter elements may be formed over active image sensor pixels on the image sensor die. Microlens structures may be formed over the color filter elements. An antireflective coating (ARC) liner may be simultaneously formed over the microlens structures and over the bond pad structures to passivate the bond pad structures.
申请公布号 US9324755(B2) 申请公布日期 2016.04.26
申请号 US201414270233 申请日期 2014.05.05
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC 发明人 Borthakur Swarnal;Sulfridge Marc;Mooney Mitchell J.
分类号 H01L27/146;H04N5/369;H04N9/30;H04N5/225 主分类号 H01L27/146
代理机构 Treyz Law Group, P.C. 代理人 Treyz Law Group, P.C. ;Tsai Jason
主权项 1. Imaging circuitry, comprising: an image sensor die that includes: a substrate;a plurality of photosensitive elements formed in the substrate;a plurality of microlenses formed over the photosensitive elements;an external bond pad structure;a dielectric layer interposed between the substrate and the external bond pad structure; anda passivation layer that is formed directly on the plurality of microlenses and directly on the external bond pad structure.
地址 Phoenix AZ US