Semiconductor device and method of forming the same

摘要

A method of forming a semiconductor device includes forming a gate stack over a substrate, forming an amorphized region in the substrate adjacent to an edge of the gate stack, forming a stress film over the substrate, performing a process to form a dislocation with a pinchoff point in the substrate, removing at least a portion of the dislocation to form a recess cavity with a tip in the substrate, and forming a source/drain feature in the recess cavity.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a first gate stack and a second gate stack over a substrate, the substrate having a surface; forming a first amorphized region in the substrate adjacent to an edge of the first gate stack, wherein the first amorphized region has a depth D1, and forming a second amorphized region in the substrate adjacent to an edge of the second gate stack; forming a stress film over the substrate; performing a process to form a first dislocation with a first pinchoff point in the substrate, wherein the first dislocation forms an angle θ1 measured with respect to a reference level orthogonal to the surface of the substrate, and wherein the first pinchoff point is spaced from the edge of the first gate stack by a distance W and has a depth D2 relative the surface of the substrate, and to form a second dislocation having a second pinchoff point spaced from the edge of the second gate stack; removing at least a portion of the first dislocation to form a recess cavity with a tip in the substrate, wherein the recess cavity has a depth D3 relative the surface of the substrate and is spaced from the edge of the second gate stack by a distance S, while leaving the second dislocation intact; forming a source/drain feature in the recess cavity; and wherein a correlation satisfies the formula, W>|D2−D3|*tan(θ1)+S.