| 发明名称 | Method for producing a semiconductor body | ||
| 摘要 | A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of: removing the transmissive layer within the separating region, applying an absorbent layer within the separating region, increasing the absorption coefficient of the transmissive layer within the separating region, and separating the chip regions along the separating regions by a laser. | ||
| 申请公布号 | US9324615(B2) | 申请公布日期 | 2016.04.26 |
| 申请号 | US201214111655 | 申请日期 | 2012.04.04 |
| 申请人 | OSRAM Opto Semiconductors GmbH | 发明人 | Perzlmaier Korbinian;Zull Heribert;Eberhard Franz;Veit Thomas;Kämpf Mathias;Dennemarck Jens |
| 分类号 | H01L21/00;H01L21/78;H01L33/00;H01S5/02 | 主分类号 | H01L21/00 |
| 代理机构 | DLA Piper LLP (US) | 代理人 | DLA Piper LLP (US) |
| 主权项 | 1. A method of producing a semiconductor body comprising: providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer comprises a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, removing the transmissive layer locally in the separating region and in the chip regions such that in each case at least one opening arises in the transmissive layer within the separating region and within the chip regions,prior to separating the chip regions, arranging a metallic layer in the openings of the transmissive layer, andseparating the chip regions along the separating regions by a laser. | ||
| 地址 | DE | ||