发明名称 |
Semiconductor memory device having an output buffer controller |
摘要 |
A device includes a data output terminal, an output buffer including n first transistors (n is a natural number greater than 1) connected in parallel with the data output terminal, and a calibration circuit to output an n-bit first code signal for controlling each of the n first transistors. In some embodiments, the calibration circuit includes a first counter circuit to output a k-bit second code signal (k is a natural number less than n), and a first code conversion circuit to convert the k-bit second code signal to the n-bit first code signal. Additional apparatus, systems, and methods are disclosed. |
申请公布号 |
US9324410(B2) |
申请公布日期 |
2016.04.26 |
申请号 |
US201414476186 |
申请日期 |
2014.09.03 |
申请人 |
Micron Technology, Inc. |
发明人 |
Arai Tetsuya |
分类号 |
G11C7/10;G11C11/4093 |
主分类号 |
G11C7/10 |
代理机构 |
Schwegman Lundberg & Woessner, P.A. |
代理人 |
Schwegman Lundberg & Woessner, P.A. |
主权项 |
1. A semiconductor device comprising:
a data output terminal; an output buffer including n first transistors connected in parallel with the data output terminal, wherein n is a natural number greater than 1; and a calibration circuit to output an n-bit first code signal to control each of the n first transistors, wherein the calibration circuit includes a first counter circuit to output a k-bit second code signal, and a first code conversion circuit to convert the k-bit second code signal to the n-bit first code signal, wherein k is a natural number less than n, and wherein current drive capabilities of the n first transistors are weighted by the power of 2. |
地址 |
Boise ID US |