发明名称 |
Sense amplifiers and memory devices having the same |
摘要 |
In a sense amplifier, a switching transistor is configured to apply a ground voltage to a ground node in response to a sense enable signal. A first detection circuit is configured to output a first detection signal to the first detection node based on a mode signal and a voltage of a bit-line. A second detection circuit is configured to output a second detection signal to the second detection node based on a voltage of a complementary bit-line. A latch circuit is connected to a supply voltage, the first detection node and the second detection node, and configured to output a first amplified signal and a second amplified signal through a latch node and a complementary latch node, respectively, based on the first detection signal and the second detection signal. |
申请公布号 |
US9324384(B2) |
申请公布日期 |
2016.04.26 |
申请号 |
US201414504596 |
申请日期 |
2014.10.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Song Tae-Joong;Park Sung-Hyun;Rim Woo-Jin;Yang Gi-Young |
分类号 |
G11C7/08;G11C7/06;G11C7/12;G11C11/419 |
主分类号 |
G11C7/08 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. A sense amplifier, comprising:
a switching transistor configured to apply a ground voltage to a ground node in response to a sense enable signal; a first detection circuit coupled between the ground node and a first detection node, the first detection circuit being configured to provide a first detection signal to the first detection node based on a mode signal and a voltage of a bit-line; a second detection circuit coupled between the ground node and a second detection node, the second detection circuit being configured to provide a second detection signal to the second detection node based on a voltage of a complementary bit-line; a latch circuit connected to a supply voltage, the first detection node and the second detection node, the latch circuit being configured to,
generate a first amplified signal and a second amplified signal based on the first and second detection signals,output the first amplified signal through a latch node, and output the second amplified signal through a complementary latch node; and wherein the mode signal has a first logic level in a double-ended read mode, and has a second logic level in a single-ended read mode, the first logic level being different from the second logic level. |
地址 |
Gyeonggi-Do KR |