发明名称 Sense amplifiers and memory devices having the same
摘要 In a sense amplifier, a switching transistor is configured to apply a ground voltage to a ground node in response to a sense enable signal. A first detection circuit is configured to output a first detection signal to the first detection node based on a mode signal and a voltage of a bit-line. A second detection circuit is configured to output a second detection signal to the second detection node based on a voltage of a complementary bit-line. A latch circuit is connected to a supply voltage, the first detection node and the second detection node, and configured to output a first amplified signal and a second amplified signal through a latch node and a complementary latch node, respectively, based on the first detection signal and the second detection signal.
申请公布号 US9324384(B2) 申请公布日期 2016.04.26
申请号 US201414504596 申请日期 2014.10.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Song Tae-Joong;Park Sung-Hyun;Rim Woo-Jin;Yang Gi-Young
分类号 G11C7/08;G11C7/06;G11C7/12;G11C11/419 主分类号 G11C7/08
代理机构 Harness, Dickey & Pierce, P.L.C. 代理人 Harness, Dickey & Pierce, P.L.C.
主权项 1. A sense amplifier, comprising: a switching transistor configured to apply a ground voltage to a ground node in response to a sense enable signal; a first detection circuit coupled between the ground node and a first detection node, the first detection circuit being configured to provide a first detection signal to the first detection node based on a mode signal and a voltage of a bit-line; a second detection circuit coupled between the ground node and a second detection node, the second detection circuit being configured to provide a second detection signal to the second detection node based on a voltage of a complementary bit-line; a latch circuit connected to a supply voltage, the first detection node and the second detection node, the latch circuit being configured to, generate a first amplified signal and a second amplified signal based on the first and second detection signals,output the first amplified signal through a latch node, and output the second amplified signal through a complementary latch node; and wherein the mode signal has a first logic level in a double-ended read mode, and has a second logic level in a single-ended read mode, the first logic level being different from the second logic level.
地址 Gyeonggi-Do KR