Copper plating bath containing a tertiary amine compound and use thereof

摘要

Provided is a copper plating technique that enables the filling of high aspect-ratio via-holes and through-holes in semiconductor substrates such as silicon substrates, organic material substrates or ceramic substrates. The disclosed technique involves a tertiary amine compound, which is obtained by reacting a heterocyclic compound with the epoxy group of a glycidyl ether group of a compound that has three or more glycidyl ether groups, and a quaternary amine compound thereof, as well as a copper plating additive, a copper plating bath, and a copper plating method employing the compounds.

主权项

1. A copper plating bath, comprising:
copper ion at 10 to 80 g/L, an organic acid or an inorganic acid at 5 to 200 g/L, and one or more compounds selected from the group consisting of a tertiary amine compound obtained by reacting a heterocyclic compound with an epoxy group of a glycidyl ether group of a compound having 3 or more glycidyl ether groups at room temperature or below without polymerizing the glycidyl ether groups and a quaternary ammonium compound obtained by quaternarizing the tertiary amine compound, wherein the heterocyclic compound is represented by Formula (II):wherein:
R4 is a hydrocarbon represented by C2-C8, which optionally has unsaturated bonds, is optionally substituted by a nitrogen atom, an oxygen atom or a sulfur atom, and forms a 5-membered ring, a 6-membered ring, or a 5-membered ring and a 6-membered ring, and the compound having 3 or more glycidyl ether groups is represented by Formula (I):wherein:
R1 is a hydrogen atom, a formyl group or one or two glycidyl ether groups optionally containing a carbonyl group constituted by C4-C8 and O2-O4; R2 is a hydrogen atom, a methyl group or an ethyl group; R3 is a hydrogen atom, a formyl group or one or two glycidyl ether groups optionally containing a carbonyl group constituted by C4-C8 and O2-O4; and, n is an integer of 1 to 4.