Semiconductor device including nanowire transistor

摘要

A semiconductor device includes at least one nanowire that is disposed over a substrate, extends to be spaced apart from the substrate, and includes a channel region, a gate that surrounds at least a part of the channel region, and a gate dielectric film that is disposed between the channel region and the gate. A source/drain region that contacts one end of the at least one nanowire is formed in a semiconductor layer that extends from the substrate to the one end of the at least one nanowire. Insulating spacers are formed between the substrate and the at least one nanowire. The insulating spacers are disposed between the gate and the source/drain region and are formed of a material that is different from a material of the gate dielectric film.

主权项

1. A semiconductor device comprising:
at least one nanowire that is disposed over a substrate, extends to be spaced apart from the substrate, and comprises a channel region; a gate that surrounds at least a part of the channel region; a gate dielectric film that is disposed between the channel region and the gate; a semiconductor layer that extends from the substrate to one end of the at least one nanowire, and comprises a source/drain region that contacts the one end of the at least one nanowire; insulating spacers that are disposed between the gate and the source/drain region and between the substrate and the at least one nanowire, and are formed of a material that is different from a material of the gate dielectric film; and a buffer layer that is disposed in a first region of the substrate and between the substrate and the gate, wherein the buffer layer is formed of a material that has a lattice constant that is higher than a lattice constant of the substrate.