Semiconductor light emitting apparatus comprising connecting plate

摘要

The present disclosure provides a semiconductor light emitting apparatus, comprising a first light emitting unit having a current supplying layer formed at the bottom; a second light emitting unit having a current supplying layer formed at the bottom and extended into the second light emitting unit; a connecting plate including a conductive portion where the first light emitting unit is placed and a conductive portion where the second light emitting unit is placed; and an electric pass for electrically connecting the first light emitting unit and the second light emitting unit.

主权项

1. A semiconductor light emitting apparatus, comprising:
a first light emitting unit which includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, an active layer interposed between the first semiconductor layer and the second semiconductor layer, and a current supplying layer formed at the bottom; a second light emitting unit which includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, an active layer interposed between the first semiconductor layer and the second semiconductor layer, and a current supplying layer formed at the bottom and extended into the second light emitting unit; a connecting plate to which the first and second light emitting units are fixed, the connecting plate having a conductive portion where the first light emitting unit is placed and which is electrically connected with the current supplying layer of the first light emitting unit, and a conductive portion where the second light emitting unit is placed and which is electrically connected with the second light emitting unit; and an electric pass for electrically connecting one of the first and second semiconductor layers in the first light emitting unit with one of the first and second semiconductor layers in the second light emitting unit, wherein the electrically connected semiconductor layers have different conductive type from each other.