Light-emitting diode

摘要

A light-emitting diode (LED) is provided. An LED die includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first electrode and a second electrode. At least a part of the first semiconductor is exposed from the light emitting layer and the second semiconductor layer. The first electrode and the second electrode is disposed on top of the exposed first semiconductor layer and the second semiconductor layer respectively. At least two metal pads are disposed on top of the first electrode and the second electrode of the LED die respectively. Each of the metal pads has a side surface. A fluorescent layer is disposed on a surface of the LED die. The fluorescent layer directly contacts with the side surfaces of the metal pads and fills a gap between the metal pads.

主权项

1. A light-emitting diode (LED), comprising:
an LED die comprising:
a first semiconductor layer;a light-emitting layer disposed on the first semiconductor layer;a second semiconductor layer disposed on the light-emitting layer, wherein at least a part of the first semiconductor is exposed from the light emitting layer and the second semiconductor layer; anda first electrode and a second electrode disposed on top of the exposed first semiconductor layer and the second semiconductor layer respectively; at least two metal pads disposed on top of said first electrode and said second electrode of said LED die respectively, wherein each of the metal pads has a side surface; and a fluorescent layer disposed on a surface of said LED die, wherein the fluorescent layer directly contacts with the side surfaces of the metal pads and fills a gap between the metal pads, and the top surface of the fluorescent layer is flat in a cross-section view, and the thickness of the fluorescent layer is greater than 30 μm, and all side surfaces of the fluorescent layer are respectively aligned with all outer side surfaces of the first semiconductor layer of the LED die.