发明名称 Compensating for off-current in a memory
摘要 A memory cell is accessed by determining an off-current of a set of memory cells, accessing a memory cell of the set of memory cells during an access period, and compensating for the off-current of the set of memory cells.
申请公布号 US9324443(B2) 申请公布日期 2016.04.26
申请号 US201414512698 申请日期 2014.10.13
申请人 Intel Corporation 发明人 Tanzawa Toru
分类号 G11C16/04;G11C16/28;G11C16/26;G11C13/00 主分类号 G11C16/04
代理机构 Alpine Technology Law Group LLC 代理人 Alpine Technology Law Group LLC
主权项 1. A method to access a memory cell, the method comprising: determining an off-current of a set of memory cells that are coupled to a sense node; accessing a memory cell of the set of memory cells during an access period; and compensating for the off-current of the set of memory cells to determine a state of the memory cell, wherein said compensating comprises applying a compensation current at the sense node during the access period.
地址 Santa Clara CA US