发明名称 |
Compensating for off-current in a memory |
摘要 |
A memory cell is accessed by determining an off-current of a set of memory cells, accessing a memory cell of the set of memory cells during an access period, and compensating for the off-current of the set of memory cells. |
申请公布号 |
US9324443(B2) |
申请公布日期 |
2016.04.26 |
申请号 |
US201414512698 |
申请日期 |
2014.10.13 |
申请人 |
Intel Corporation |
发明人 |
Tanzawa Toru |
分类号 |
G11C16/04;G11C16/28;G11C16/26;G11C13/00 |
主分类号 |
G11C16/04 |
代理机构 |
Alpine Technology Law Group LLC |
代理人 |
Alpine Technology Law Group LLC |
主权项 |
1. A method to access a memory cell, the method comprising:
determining an off-current of a set of memory cells that are coupled to a sense node; accessing a memory cell of the set of memory cells during an access period; and compensating for the off-current of the set of memory cells to determine a state of the memory cell, wherein said compensating comprises applying a compensation current at the sense node during the access period. |
地址 |
Santa Clara CA US |