| 摘要 |
Provided are a structure and a manufacturing method of a semiconductor device. The semiconductor device comprises a semiconductor substrate and a first conductive feature on the semiconductor substrate. In addition, the semiconductor device further includes a first dielectric layer over the semiconductor substrate and configured to surround the first conductive feature. The semiconductor device further comprises a second conductive feature over the first conductive feature, and the second conductive feature extends into the first conductive feature. Also, the semiconductor device includes a second dielectric layer over the first dielectric layer and configured to surround the second conductive feature. According to the present invention, performance and reliability of a semiconductor device are substantially improved. |
