| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device comprising a die-bonding film which is properly broken by tensile force.SOLUTION: In the method of manufacturing the semiconductor device, a die-bonding film is used. The breaking energy per unit area of the die-bonding film is 1 J/mmor less and the elongation at break thereof is 40% or more to 500% or less at a room temperature before thermal setting. The manufacturing method comprises the steps of: performing a pretreatment of a semiconductor wafer so that the semiconductor wafer can be easily divided along a predetermined dividing line; bonding the semiconductor wafer after the pretreatment to a dicing die-bonding film; and forming a semiconductor chip by breaking the semiconductor wafer and the die-bonding film constituting the dicing die-bonding film by applying tensile force to the dicing die-bonding film. |
