发明名称 |
Semiconductor device structure and method for forming the same |
摘要 |
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes an isolation structure positioned in the semiconductor substrate and adjacent to a first active region of the semiconductor substrate. The semiconductor device structure includes a gate stack disposed over the first active region. The semiconductor device structure includes a first contact structure disposed over the first active region and positioned between the isolation structure and the gate stack. The semiconductor device structure includes a dummy gate stack disposed over the isolation structure and adjacent to the gate stack. The dummy gate stack is not positioned over a portion of the isolation structure next to the first contact structure. |
申请公布号 |
US9324864(B2) |
申请公布日期 |
2016.04.26 |
申请号 |
US201414502430 |
申请日期 |
2014.09.30 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Liang Chia-Yao;Liao Chen-Liang;Lei Ming;Chen Chih-Hsiao;Huang Yi-Lii |
分类号 |
H01L29/76;H01L29/78;H01L29/45;H01L29/06;H01L27/088;H01L29/66;H01L21/8234 |
主分类号 |
H01L29/76 |
代理机构 |
Birch, Stewart, Kolasch & Birch, LLP |
代理人 |
Birch, Stewart, Kolasch & Birch, LLP |
主权项 |
1. A semiconductor device structure, comprising:
a semiconductor substrate; an isolation structure positioned in the semiconductor substrate and adjacent to a first active region of the semiconductor substrate; a gate stack disposed over the first active region; a first contact structure disposed over the first active region and positioned between the gate stack and the isolation structure; and a dummy gate stack disposed over the isolation structure and adjacent to the gate stack, wherein the dummy gate stack is not positioned over a portion of the isolation structure next to the first contact structure such that only one of the dummy gate stack and the first contact structure is present in a cross-sectional view of the semiconductor device structure, and wherein the cross-sectional view of the semiconductor device structure is taken along an imaginary plane that is parallel to a normal direction of a top surface of the semiconductor substrate and perpendicular to a longitudinal direction of the gate stack. |
地址 |
Hsin-Chu TW |