Integrated circuit heat dissipation using nanostructures

摘要

An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer.

主权项

1. A method of manufacturing a semiconductor structure, comprising:
forming an isolation layer on an electrically conductive feature of an integrated circuit device, wherein the isolation layer is electrically insulating and thermally conducting; forming an electrically conductive layer on the isolation layer; and forming a plurality of nanowire structures on a surface of the electrically conductive layer, wherein the forming the plurality of nanowire structures comprises growing a plurality of spaced apart columnar structures each having a sub-micron width, wherein the growing comprises:
submerging at least the electrically conductive layer in a growth solution comprising a zinc source; andapplying an electric potential between a first electrode wired to the electrically conductive layer and a second electrode submerged in the growth solution, and further comprising forming a discontinuity in a wiring path that electrically connects a contact pad to the electrically conductive layer.