| 发明名称 | Source line voltage regulation scheme for leakage reduction | ||
| 摘要 | An integrated circuit that includes a generator unit connected to one or more pull-up units, one or more pull-up units connected to one or more source lines and an array of memory cells connected to the one or more source lines. The generator unit is configured to set a first voltage signal of each pull-up unit of the one or more pull-up units. Each pull-up unit of the one or more pull-up units is connected with the corresponding source line of the one or more source lines and is configured to set a current of the corresponding source line of the one or more source lines. The array of memory cells is electrically connected to the one or more source lines and one or more bit lines. | ||
| 申请公布号 | US9324383(B2) | 申请公布日期 | 2016.04.26 |
| 申请号 | US201414220663 | 申请日期 | 2014.03.20 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Li Gu-Huan;Chen Hsu-Shun;Chen Chung-Chieh;Kuo Cheng-Hsiung |
| 分类号 | G11C7/00;G11C5/14;G11C11/408;G11C8/08;G11C7/12;G11C16/24;G11C16/30 | 主分类号 | G11C7/00 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. An integrated circuit, comprising: one or more pull-up units connected to one or more source lines, wherein each pull-up unit of the one or more pull-up units is connected with a corresponding source line of the one or more source lines and is configured to set a current of the corresponding source line of the one or more source lines; a generator unit connected to the one or more pull-up units, wherein the generator unit is configured to set a first voltage signal of each pull-up unit of the one or more pull-up units, and the generator unit comprises an operational amplifier; and an array of memory cells connected to the one or more source lines, wherein the array of memory cells is electrically connected to the one or more source lines and one or more bit lines. | ||
| 地址 | Hsinchu TW | ||