| 摘要 |
A method for patterning a substrate is described. The patterning method includes the steps of: receiving a first patterned layer overlying a material layer to be etched on a substrate, wherein the first patterned layer is composed of a resist material having material properties (i) that provide lithographic resolution of less than about 40 nanometers when exposed to extreme ultraviolet radiation lithography, and material properties (ii) that provide a nominal etch resistance to an etch process condition; over-coating the first patterned layer with an image reversal material so that the image reversal material fills and covers the first patterned layer; removing an upper portion of the image reversal material so that the topmost surface of the first patterned layer is exposed; and removing the first patterned layer so that the image reversal material remains to be a second patterned layer. |
