Fuse element programming circuit and method

摘要

In one embodiment, a programming circuit is configured to form a programming current for a silicide fuse element by using a non-silicide programming element.

主权项

1. A circuit for programming a fuse element comprising:
a memory cell having the fuse element that includes a first semiconductor material body region and a silicide layer; a programming circuit configured to form a programming current to program the fuse element; and a programming element configured to control a value of the programming current, the programming element having a second semiconductor material body region but not a silicide layer; the programming circuit configured to control the programming current to a first value responsively to a value of the fuse element and to subsequently control the programming current to a different value responsively to a value of the programming element.