| 发明名称 |
MRAM sensing with magnetically annealed reference cell |
| 摘要 |
Systems and method for reading/sensing data stored in magnetoresistive random access memory (MRAM) cells using magnetically annealed reference cells. A MRAM includes a reference circuit comprising at least one magnetic storage cell, wherein each magnetic storage cell in the MRAM is programmed to the same state. The reference circuit includes a load element coupled to the magnetic storage cell, wherein the load element is configured to establish a reference voltage during a read operation. |
| 申请公布号 |
US9324404(B2) |
申请公布日期 |
2016.04.26 |
| 申请号 |
US201414156541 |
申请日期 |
2014.01.16 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Rao Hari M.;Zhu Xiaochun |
| 分类号 |
G11C11/00;G11C11/16;H01L43/12;G11C7/14;G11C13/00 |
主分类号 |
G11C11/00 |
| 代理机构 |
|
代理人 |
Lo Elaine |
| 主权项 |
1. A method of forming a reference circuit for a magnetoresistive random access memory (MRAM), the method comprising:
forming at least one magnetic storage cell, wherein each magnetic storage cell in the MRAM is programmed to the same state; and coupling a load element to the magnetic storage cell, wherein the load element is configured to establish a reference voltage during a read operation. |
| 地址 |
San Diego CA US |
