发明名称 MANUFACTURING METHOD OF SUBSTRATE GRAPHENE GROWTH AND SUBSTRATE GRAPHENE GROWTH
摘要 The present invention relates to a producing method of substrate growth graphene, the substrate growth graphene, and an electronic component comprising the same. The producing method of substrate growth graphene comprises an (a) step of providing a metal layer on a substrate; a (b) step of supplying etching gas and carbon-containing gas, and performing metal organic chemical vapor deposition (MOCVD); a (c) step of growing graphene on the metal layer; and a (d) step of growing graphene on the substrate in a state which does not contain the metal layer by removing all metals of the metal layer due to the etching gas, while performing continuous MOCVD in the (c) step.
申请公布号 KR20160044611(A) 申请公布日期 2016.04.26
申请号 KR20140134461 申请日期 2014.10.06
申请人 LEE, YOUN TEK 发明人 LEE, YOUN TEK
分类号 C01B31/04;C01B31/02 主分类号 C01B31/04
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