High-k metal gate device structure for human blood gas sensing

摘要

A device structure for detecting partial pressure of oxygen in blood includes a semiconductor substrate including a source region and a drain region. A multi-layer gate structure is formed on the semiconductor substrate. The multi-layer gate structure includes an oxide layer formed over the semiconductor substrate, a high-k layer formed over the oxide layer, a metal gate layer formed over the high-k layer, and a polysilicon layer formed over the metal gate layer. A receiving area holds a blood sample in contact with the multi-layer gate structure. The high-k layer is exposed to contact the blood sample in the receiving area.

主权项

1. A method for fabricating a device structure for detecting partial pressure of oxygen in blood, comprising:
forming a multi-layer gate structure on a semiconductor substrate by:
forming an oxide layer, having a thickness of substantially 0.05 μm, over the semiconductor substrate;forming a high-k layer formed over the oxide layer;forming a metal gate layer formed over the high-k layer; andforming a polysilicon layer formed over the metal gate layer; forming a porous membrane layer over an entirety of the multi-layer gate structure; forming spacers on opposite sides of the multi-layer gate structure; forming a source region and a drain region within the semiconductor substrate by implanting impurities therein after the spacers have been formed; removing the spacers to expose a perimeter of the high-k layer after the source and drain regions have been formed and to form a receiving area configured to receive blood that has been filtered through the porous membrane layer prior to making contact with the exposed perimeter of the high-k layer; and connecting the multi-layer gate structure to a processor for calculating a partial pressure of oxygen in the filtered blood in the receiving area based on a detected shift in a flatband voltage of the multi-layer gate structure with respect to temperature.