| 摘要 |
According one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode and being in contact with the first electrode; a second semiconductor layer including a first part and a second part, and the second part being contact with the first electrode, and the second semiconductor layer having an effective impurity concentration lower than an effective impurity concentration in the first semiconductor layer; a third semiconductor layer provided between the second semiconductor layer and the second electrode, and having an effective impurity concentration lower than an effective impurity concentration in the second semiconductor layer; and a fourth semiconductor layer provided between the third semiconductor layer and the second electrode, and being in contact with the second electrode. |
| 主权项 |
1. A semiconductor device, comprising:
a first electrode; a second electrode; a first semiconductor layer of a first conductivity type, the first semiconductor layer being provided between the first electrode and the second electrode, and the first semiconductor layer being in contact with the first electrode; a second semiconductor layer of a first conductivity type, the second semiconductor layer including a first part provided between the first semiconductor layer and the second electrode and a second part provided between the first electrode and the second electrode, the second part being in contact with the first electrode, and the second semiconductor layer having an effective impurity concentration lower than an effective impurity concentration in the first semiconductor layer; a third semiconductor layer of a first conductivity type, the third semiconductor layer being provided between the second semiconductor layer and the second electrode, and the third semiconductor layer having an effective impurity concentration lower than an effective impurity concentration in the second semiconductor layer; a fourth semiconductor layer of a second conductivity type, the fourth semiconductor layer being provided between the third semiconductor layer and the second electrode; a fifth semiconductor layer of a first conductivity type, the fifth semiconductor layer being provided between the fourth semiconductor layer and the second electrode, and the fifth semiconductor layer being in contact with the second electrode; and a third electrode provided on the fourth semiconductor layer via an insulating film. |
