Superjunction power device and manufacturing method

摘要

A method for manufacturing a semiconductor power device, comprising the steps of: forming a trench in a semiconductor body having a first type of conductivity; partially filling the trench with semiconductor material via epitaxial growth so as to obtain a first column having a second type of conductivity and having an internal cavity. The epitaxial growth includes simultaneously supplying a gas containing dopant ions of the second type of conductivity, hydrochloric acid HCl in gaseous form and dichlorosilane DCS in gaseous form, so that the ratio between the amount of HCl and the amount of DCS has a value of from 3.5 to 5.5.

主权项

1. A method, comprising:
manufacturing a semiconductor power device, the manufacturing including:
forming a trench in a semiconductor body, the body having a first type of conductivity; andforming a first column having a height by partially filling said trench with a semiconductor material via epitaxial growth, the first column having a second type of conductivity, the forming of the first column including:
forming an internal cavity extending along the height, the internal cavity having a central portion, a first end, and a second end, the first end being separated from the second end by the central portion, both the first and second ends being wider than the central portion.