| 发明名称 | Solid-state imaging device, method of manufacturing a solid-state imaging device, and electronic apparatus | ||
| 摘要 | Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode. | ||
| 申请公布号 | US9324753(B2) | 申请公布日期 | 2016.04.26 |
| 申请号 | US201414531547 | 申请日期 | 2014.11.03 |
| 申请人 | Sony Corporation | 发明人 | Kato Nanako;Wakano Toshifumi |
| 分类号 | H01L27/146 | 主分类号 | H01L27/146 |
| 代理机构 | Sheridan Ross P.C. | 代理人 | Sheridan Ross P.C. |
| 主权项 | 1. A solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function, the solid-state imaging device comprising a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode. | ||
| 地址 | Tokyo JP | ||