发明名称 Semiconductor device having semiconductor layers with different thicknesses
摘要 A semiconductor device has a first element region, a second element region, and a first isolation region in a thin film region and a third element region, a fourth element region, and a second isolation region in a thick film region. It is manufactured with step (a) of providing a substrate having a silicon layer formed via an insulating layer, step (b) of forming element isolation insulating films in the silicon layer in the first isolation region and the second isolation region of the substrate step (c) of forming a hard mask in the thin film region, step (d) of forming silicon films over the silicon layer exposed from the hard mask in the third element region and the fourth element region, and step (e) of forming element isolation insulating films between the silicon films in the third element region and the fourth element region.
申请公布号 US9324734(B2) 申请公布日期 2016.04.26
申请号 US201514593070 申请日期 2015.01.09
申请人 RENESAS ELECTRONICS CORPORATION 发明人 Hoshino Yutaka
分类号 H01L27/01;H01L27/12;H01L27/105;H01L27/092;H01L27/108;H01L29/51;H01L21/8234;H01L21/8238;H01L29/78 主分类号 H01L27/01
代理机构 Shapiro, Gabor and Rosenberger, PLLC 代理人 Shapiro, Gabor and Rosenberger, PLLC
主权项 1. A semiconductor device, comprising: a first element region, a second element region, and a first isolation region including a first insulating film isolating between the first element region and the second element region; a third element region, a fourth element region, and a second isolation region including a second insulating film isolating between the third element region and the fourth element region; and a fifth element region between the second element region and the fourth element region, and a third isolation region including a third insulating film isolating between the fifth element region and the fourth element region, wherein: the first element region and the second element region have a first semiconductor film with a first film thickness disposed over a fourth insulating film; the third element region, the fourth element region, and the fifth element region have a second semiconductor film with a second film thickness thicker than the first film thickness disposed over the fourth insulating film; and the third insulating film is thicker than the first insulating film and thinner than the second insulating film.
地址 Tokyo JP