Flip-flop layout architecture implementation for semiconductor device

摘要

A semiconductor device includes a substrate including PMOSFET and NMOSFET regions. First and second gate electrodes are provided on the PMOSFET region, and third and fourth gate electrodes are provided on the NMOSFET region. A connection contact is provided to connect the second gate electrode with the third gate electrode, and a connection line is provided on the connection contact to cross the connection contact and connect the first gate electrode to the fourth gate electrode.

主权项

1. A semiconductor device, comprising:
a substrate including a PMOSFET region and an NMOSFET region; a first and a second gate electrode in the PMOSFET region; a third and a fourth gate electrode in the NMOSFET region; a connection contact connecting the second gate electrode and the third gate electrode, wherein the connection contact is electrically connected with upper surfaces of the second and third gate electrodes; and a connection line connecting the first gate electrode and the fourth gate electrode, the connection line crossing over the connection contact.