| 发明名称 | Integrated circuit and related manufacturing method | ||
| 摘要 | A method for manufacturing an integrated circuit may include the following steps: forming a first transistor, which includes a first active region; forming a second transistor, which includes a second active region; forming a third transistor, which includes a gate electrode that overlaps each of the first active region and the second active region; and providing a predetermined voltage to the gate electrode for turning off the third transistor to isolate the first transistor from the second transistor. | ||
| 申请公布号 | US9324712(B2) | 申请公布日期 | 2016.04.26 |
| 申请号 | US201414581671 | 申请日期 | 2014.12.23 |
| 申请人 | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION;SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION | 发明人 | Shen Yi Hua;Yu Yun Chu;Zhong Hao |
| 分类号 | H01L27/08;H01L27/088;H01L21/66;H01L21/8234;H01L27/02 | 主分类号 | H01L27/08 |
| 代理机构 | Innovation Counsel LLP | 代理人 | Innovation Counsel LLP |
| 主权项 | 1. A method for manufacturing an integrated circuit, the method comprising: forming a first transistor comprising a first active region; forming a second transistor comprising a second active region; forming a third transistor comprising a gate electrode, wherein the gate electrode is formed to overlap each of the first active region and the second active region in a configuration that isolates the first transistor from the second transistor when the third transistor is in an off state; and providing a predetermined voltage to the gate electrode for turning off the third transistor to isolate the first transistor from the second transistor. | ||
| 地址 | CN | ||