发明名称 Optoelectronic device
摘要 An optoelectronic device comprising: a substrate; a plurality of semiconductor units electrically connected with each other and disposed jointly on the substrate, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between thereof; a plurality of first electrodes disposed on each first semiconductor layer respectively; and a plurality of second electrodes disposed on each second semiconductor layer respectively, wherein at least one of the first electrodes comprises a first extension, and at least one of the second electrodes comprises a second extension, wherein at least one of the first extension and the second extension comprises a curve which is not parallel to the edge of the semiconductor units.
申请公布号 US9324691(B2) 申请公布日期 2016.04.26
申请号 US201012830059 申请日期 2010.07.02
申请人 EPISTAR CORPORATION 发明人 Jing Chang-Huei;Shen Chien-Fu
分类号 H01L33/38;H01L25/075;H01L33/20;H01L33/62 主分类号 H01L33/38
代理机构 Patterson & Sheridan, LLP 代理人 Patterson & Sheridan, LLP
主权项 1. An optoelectronic device comprising: a substrate; grooves on the substrate; a plurality of semiconductor units on the substrate and separated by the grooves, wherein each semiconductor unit comprises an edge, a first semiconductor layer, a second semiconductor layer, and an active region interposed between the first semiconductor layer and the second semiconductor layer; a plurality of connecting parts crossing one of the grooves for connecting two of the plurality of semiconductor units, wherein the plurality of connecting parts are physically isolated from each other; a first electrode comprising a plurality of first extensions physically isolated from each other and disposed on each first semiconductor layer, wherein the plurality of first extensions is spaced apart from the edge and connected to the plurality of connecting parts one by one; and a second electrode comprising a plurality of second extensions physically connected to each other and disposed on each second semiconductor layer, wherein the plurality of second extensions is spaced apart from the edge and jointly connected to the plurality of connecting parts.
地址 Hsinchu TW