发明名称 |
Method for manufacturing semiconductor structure |
摘要 |
A method includes followings operations. A substrate including a first surface and a second surface is provided. The substrate and a transparent film are heated to attach the transparent film on the first surface. A first coefficient of a thermal expansion (CTE) mismatch is between the substrate and the transparent film. The substrate and the transparent film are cooled. A polymeric material is disposed on the second surface. A second CTE mismatch is between the substrate and the polymeric material. The second CTE mismatch is counteracted by the first CTE mismatch. |
申请公布号 |
US9324587(B2) |
申请公布日期 |
2016.04.26 |
申请号 |
US201414183913 |
申请日期 |
2014.02.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
Yu Chen-Hua;Huang Chih-Fan;Lin Chun-Hung;Cheng Ming-Da;Liu Chung-Shi;Lii Mirng-Ji |
分类号 |
H01L21/56;H01L21/268;H01L25/00;H01L23/00;H01L29/78;H01L23/31 |
主分类号 |
H01L21/56 |
代理机构 |
WPAT, P.C., Intellectual Property Attorneys |
代理人 |
WPAT, P.C., Intellectual Property Attorneys ;King Anthony |
主权项 |
1. A method, comprising:
providing a substrate including a first surface and a second surface; heating the substrate and a transparent film to attach the transparent film on the first surface, wherein a first coefficient of a thermal expansion (CTE) mismatch is between the substrate and the transparent film; cooling the substrate and the transparent film; and disposing a polymeric material on the second surface, wherein a second CTE mismatch is between the substrate and the polymeric material and the second CTE mismatch is counteracted by the first CTE mismatch. |
地址 |
Hsinchu TW |