发明名称 Process for producing trichlorosilane
摘要 [Problems] To provide a process for efficiently producing trichlorosilane on an industrial scale by efficiently reusing the waste gas of after trichlorosilane is separated by condensation from the gas that is formed by the reaction of metallic silicon with hydrogen chloride.;[Means for Solution] A process for producing trichlorosilane, including, independently from each other, a first production process for forming trichlorosilane by reacting metallic silicon with hydrogen chloride and a second production process for forming trichlorosilane by reacting metallic silicon with tetrachlorosilane and hydrogen; wherein;trichlorosilane and other chlorosilane compounds are separated by condensation from trichlorosilane-containing gases formed by reaction in the first production process, and the waste gas from which trichlorosilane and other chlorosilane compounds have been separated by condensation is fed as a hydrogen source to the second production process.
申请公布号 US9321653(B2) 申请公布日期 2016.04.26
申请号 US201113576690 申请日期 2011.02.09
申请人 TOKUYAMA CORPORATION 发明人 Akiyoshi Ayao;Aimoto Tadashi
分类号 C01B33/08;C01B33/107 主分类号 C01B33/08
代理机构 Birch, Stewart, Kolasch & Birch, LLP 代理人 Birch, Stewart, Kolasch & Birch, LLP
主权项 1. A process for producing trichlorosilane, including, independently from each other, a first production process for forming said trichlorosilane by reacting metallic silicon with hydrogen chloride and a second production process for forming said trichlorosilane by reacting metallic silicon with tetrachlorosilane and hydrogen; wherein said trichlorosilane and other chlorosilane compounds are separated by condensation from trichlorosilane-containing gases formed by reaction in said first production process, and waste gases from which said trichlorosilane and other chlorosilane compounds have been separated by condensation are continuously fed without being refined as a hydrogen source to the second production process, wherein the metallic silicon is used in the first production process in an amount not less than twice as much as the amount of the metallic silicon used in the second production process.
地址 Shunan-Shi JP