Light emitting diode chip having distributed Bragg reflector and method of fabricating the same

摘要

A light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range, and the distributed Bragg reflector has a reflectivity of at least 90% for light in a full wavelength range of 400 to 700 nm.

主权项

1. A light emitting diode package, comprising:
a mounting surface; a light emitting diode chip arranged on the mounting surface; and a reflecting surface to reflect at least a part of a light emitted from the light emitting diode chip, wherein a distributed Bragg reflector comprising a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range is arranged on at least a part of the reflecting surface, and wherein the distributed Bragg reflector has a reflectivity of at least 90% for light in a full wavelength range of 400 to 700 nm.