Gated diode, battery charging assembly and generator assembly

摘要

A gated diode may include source zones and a drain zone which are both of a first conductivity type. The source zones directly adjoin a first surface of a semiconductor die and the drain zone directly adjoins an opposite second surface of the semiconductor die. The drain zone includes a drift zone formed in an epitaxial layer of the semiconductor die. Base zones of a second conductivity type, which is the opposite of the first conductivity type, are provided between the drain zones and the source zones. The drift zone further includes adjustment zones directly adjoining a base zone and arranged between the respective base zone and the second surface, respectively. A net dopant concentration in the adjustment zone is at least twice a net dopant concentration in the second sub-zone. The adjustment zones precisely define the reverse breakdown voltage.

主权项

1. A gated diode comprising:
source zones and a drain zone of a first conductivity type, the source zones directly adjoining a first surface and the drain zone directly adjoining an opposite second surface of a semiconductor die, the drain zone comprising a drift zone formed in an epitaxial layer of the semiconductor die; base zones of a second conductivity type opposite to the first conductivity type, the base zones provided between the drain zone and the source zones; gate electrodes; and gate dielectrics between one of the base zones and one of the gate electrodes, wherein the base zones are electrically connected with the source zones and the gate electrodes, the drain zone comprises adjustment zones of the first conductivity type, the adjustment zones directly adjoining one of the base zones and being arranged between the respective base zone and the second surface, respectively, and having a net dopant concentration at least twice a net dopant concentration in portions of the drift zone adjoining the adjustment zones.