| 摘要 |
A solid-state image sensor, comprises: a photoelectric conversion layer on which photoelectric conversion elements are arranged; and an wiring layer including at least one layer of a metal film, and an interlayer insulating film which fills a surrounding portion of the metal film, wherein the wiring layer is arranged at a position deeper than the photoelectric conversion layer on a side opposite to a light incidence side with respect to the photoelectric conversion layer, and at least a first metal film arranged at a position closest to the photoelectric conversion layer of the metal film of the wiring layer is arranged on a region which is not irradiated with light rays in a predetermined wavelength range, which light has passed through the photoelectric conversion layer. |
