| 发明名称 | Transistor, semiconductor device and method of manufacturing the same | ||
| 摘要 | A semiconductor device including a central region, side regions located in both sides of the central region, and conductive layers including a first barrier pattern formed in the central region, a material pattern formed in the first barrier pattern and having an etch selectivity with respect to the first barrier pattern, and a second barrier pattern formed in the material pattern; and insulating layers alternately stacked with the conductive layers. | ||
| 申请公布号 | US9324824(B2) | 申请公布日期 | 2016.04.26 |
| 申请号 | US201414324953 | 申请日期 | 2014.07.07 |
| 申请人 | SK Hynix Inc. | 发明人 | Lee Ki Hong;Bin Jin Ho;Kim Soo Jin;Pyi Seung Ho |
| 分类号 | H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;H01L29/49;H01L29/06;H01L29/78;H01L21/28;H01L29/66;H01L27/115 | 主分类号 | H01L29/76 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor device, comprising: conductive layers each having a central region and side regions located in both sides of the central region, the conductive layers each including a first barrier pattern formed in the central region, a material pattern, which is formed in the first barrier pattern and has an etch selectivity with respect to the first barrier pattern, and a second barrier pattern formed in the material pattern; and insulating layers alternately stacked with the conductive layers. | ||
| 地址 | Gyeonggi-do KR | ||