发明名称 Charged particle inspection method and charged particle system
摘要 The present invention relates to a charged particle system comprising: a charged particle source; a first multi aperture plate; a second multi aperture plate disposed downstream of the first multi aperture plate, the second multi aperture plate; a controller configured to selectively apply at least first and second voltage differences between the first and second multi aperture plates; wherein the charged particle source and the first and second multi aperture plates are arranged such that each of a plurality of charged particle beamlets traverses an aperture pair, said aperture pair comprising one aperture of the first multi aperture plate and one aperture of the second multi aperture plate, wherein plural aperture pairs are arranged such that a center of the aperture of the first multi aperture plate is, when seen in a direction of incidence of the charged particle beamlet traversing the aperture of the first multi aperture plate, displaced relative to a center of the aperture of the second multi aperture plate. The invention further pertains to a particle-optical component configured to change a divergence of a set of charged particle beamlets and a charged particle inspection method comprising inspection of an object using different numbers of charged particle beamlets.
申请公布号 US9324537(B2) 申请公布日期 2016.04.26
申请号 US201414309452 申请日期 2014.06.19
申请人 APPLIED MATERIALS ISRAEL, LTD.;CARL ZEISS MICROSCOPY GMBH 发明人 Kemen Thomas;Knippelmeyer Rainer;Schubert Stefan
分类号 H01J37/00;H01J37/04;H01J37/09;H01J37/317 主分类号 H01J37/00
代理机构 Morris & Kamlay LLP 代理人 Morris & Kamlay LLP
主权项 1. A charged particle system comprising: at least one charged particle source; a first multi aperture plate disposed downstream of the at least one charged particle source, the first multi aperture plate comprising a plurality of apertures; a second multi aperture plate disposed downstream of the first multi aperture plate, the second multi aperture plate comprising a plurality of apertures; a controller configured to selectively apply at least first and second voltage differences between the first and second multi aperture plates; wherein the at least one charged particle source and the first and second multi aperture plates are arranged such that each of a plurality of charged particle beamlets traverses an aperture pair and exits the second multi aperture plate in a direction different from a direction at which it enters the first multi aperture plate, said aperture pair comprising one aperture of the first multi aperture plate and one aperture of the second multi aperture plate, wherein plural aperture pairs are arranged such that a center of the aperture in the second multi aperture plate is arranged at a distance from a straight line coinciding with a charged particle ray path upstream of the first multi aperture plate and traversing a center of the aperture of the first multi aperture plate.
地址 Rehovot IL