Semiconductor device manufacturing method

摘要

A semiconductor device includes a p-type semiconductor layer, n-type column regions formed of columnar thermal donors exhibiting an n-type property, a p-type column region interposed between the n-type column regions, the n-type column regions configured to form a super-junction structure in cooperation with the p-type column region, a channel region formed in the semiconductor layer, a source region formed in the channel region, a gate insulator film formed on the semiconductor layer, and a gate electrode formed on the gate insulator film and opposite to the channel region across the gate insulator film.

主权项

1. A semiconductor device, comprising:
a p-type semiconductor layer; n-type column regions arranged in a mutually spaced-apart relationship along a predetermined direction parallel to a front surface of the semiconductor layer, each of the n-type column regions formed of thermal donors exhibiting an n-type property; a p-type column region of the semiconductor layer interposed between the n-type column regions adjoining to each other, the n-type column regions configured to form a super-junction structure in the semiconductor layer in cooperation with the p-type column region; a channel region of an n-type or p-type selectively formed in a front surface portion of the semiconductor layer to make up a portion of the front surface of the semiconductor layer; a source region selectively formed in a front surface portion of the channel region to make up a portion of the front surface of the semiconductor layer, a conductivity type of the source region being opposite to that of the channel region; a gate insulator film formed on the front surface of the semiconductor layer; and a gate electrode formed on the gate insulator film and opposite to the channel region across the gate insulator film, wherein H+ particles are selectively irradiated on a plurality of portions of the semiconductor layer to form the n-type column regions formed of thermal donors.