| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which allows each semiconductor element to obtain sufficient bonding strength by reducing pressurization unevenness between semiconductor elements even when a plurality of semiconductor elements are heated and pressurized.SOLUTION: A semiconductor device comprises: a first semiconductor element 120; a second semiconductor element 110 thicker than the first semiconductor element; and an insulating substrate 140 provided with a wiring layer 130. The first semiconductor element and the wiring layer 130 are bonded via a first sintered layer 121 sintered using a silver powder. The second semiconductor element and the wiring layer 130 are bonded via a second sintered layer 111 sintered using a sintered metal having a larger volume contraction rate than the silver powder. |
