| 摘要 |
PROBLEM TO BE SOLVED: To provide a p-type group III nitride semiconductor exhibiting a lower resistance p-type characteristic than a conventional p-type semiconductor composed of a p-type group III nitride semiconductor superlattice, and having a desired refractive index and a band gap.SOLUTION: A p-type group III nitride semiconductor is a p-type group III nitride semiconductor 23 composed of a superlattice structure of an InAlGaN layer and a p-type InAlGaN layer which are epitaxially grown on a laminate structure with a low-temperature GaN buffer layer 21 and a GaN layer 22 sequentially laminated on a sapphire substrate 20. |
