| 摘要 |
Switch devices, such as Silicon Controlled Rectifier (SCR), DIAC, or TRIAC, on a semiconductor body are disclosed. P/N junctions can be built on a semiconductor body, such as polysilicon or active region body on an insulated substrate, with a first implant in one end and a second implant in the other end. The first and second implant regions are separated with a space. A silicide block layer can cover the space and overlap into both implant regions to construct P/N junctions in the interface. |
| 主权项 |
1. An electronic system including at least a switch device built on a semiconductor body, the switch device comprising:
at least four regions in a portion of the semiconductor body, the first and the third regions being implanted with a first type of dopant, the second the fourth regions being implanted with a second type of dopant, and the regions being adjacent are separated by spaces; and a silicide block layer (SBL) covering the spaces and overlapping into both implant regions to construct P/N junctions between the first/second and second/third regions, wherein the first and third implant regions are conductive when a sufficiently high voltage is applied between the first and third implant regions, wherein the first, fourth, and third regions are served as the anode, cathode, and gate of a first Silicon-Controlled Rectifier (SCR), wherein the switch device further comprises a second SCR built on the semiconductor body having the opposite type of implants as in the first, second, third and fourth regions of the first SCR; and wherein the first, fourth, and third regions of the first and second SCRs are coupled, respectively, to serve as the first, second and gate terminals of a TRIAC, respectively. |
