Semiconductor device and method of forming shielding layer over integrated passive device using conductive channels

摘要

A semiconductor device is made by providing a substrate, forming a first insulation layer over the substrate, forming a first conductive layer over the first insulation layer, forming a second insulation layer over the first conductive layer, and forming a second conductive layer over the second insulation layer. A portion of the second insulation layer, first conductive layer, and second conductive layer form an integrated passive device (IPD). The IPD can be an inductor, capacitor, or resistor. A plurality of conductive pillars is formed over the second conductive layer. One conductive pillar removes heat from the semiconductor device. A third insulation layer is formed over the IPD and around the plurality of conductive pillars. A shield layer is formed over the IPD, third insulation layer, and conductive pillars. The shield layer is electrically connected to the conductive pillars to shield the IPD from electromagnetic interference.

主权项

1. A method of making a semiconductor device, comprising:
providing a first substrate; forming a first insulating layer over the first substrate; forming a first conductive layer over the first insulating layer; forming a second insulating layer over the first conductive layer; forming a second conductive layer over the second insulating layer with a portion of the second conductive layer wound to exhibit inductive properties; forming a first conductive pillar and second conductive pillar on the second conductive layer; forming a third insulating layer over the second conductive layer and around the first conductive pillar and second conductive pillar; forming a third conductive layer including a first portion on the first conductive pillar and a second portion on the second conductive pillar; and disposing a second substrate over the third conductive layer and electrically connected to the second conductive layer through the first conductive pillar, wherein the second portion of the third conductive layer shields electromagnetic interference (EMI) between the second substrate and the wound portion of the second conductive layer.