| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion element excellent in characteristics even if the width of a gap region is larger than the width of an overlapping region.SOLUTION: A photoelectric conversion element includes a semiconductor substrate (1) of first conductivity type or second conductivity type, a first conductivity type amorphous semiconductor film (3) and a second conductivity type amorphous semiconductor film (5) provided on one side of the semiconductor substrate (1). A first electrode (11) is provided on the first conductivity type amorphous semiconductor film (3), and a second electrode (12) is provided on the second conductivity type amorphous semiconductor film (5). An overlapping region (21), i.e., a region where the end of the first conductivity type amorphous semiconductor film (3) and the end of the second conductivity type amorphous semiconductor film (5) are overlapping, is provided. The width Wg of a gap region (22) between adjoining first electrode (11) and second electrode (12) is wider than the width Wo of the overlapping region (21). The width Wg of the gap region (22) is 120 μm or less, and the area rate of the gap region (22) is 16% or less.SELECTED DRAWING: Figure 1 |
