发明名称 HIGH FREQUENCY AMPLIFIER
摘要 PROBLEM TO BE SOLVED: To provide a high frequency amplifier capable of uniformly making effects of a harmonic circuit close to each other regarding a transistor group connected to one transmission line and a transistor group connected to another transmission line.SOLUTION: The high frequency amplifier includes: a second substrate formed on a ground conductive layer that is formed on a first substrate; a plurality of transistor groups which are formed on the second substrate; a plurality of transmission lines which are formed on the second substrate and transmit output of the plurality of transistor groups; an insulation layer which is formed on the second substrate and includes at least one opening; a pad electrode which is formed on the insulation layer and has a shape that is elongated in a planar view, and with which the plurality of transmission lines are connected to a side surface in a length direction while being spaced apart from each other; at least one connection metal that fills the at least one opening and is connected with a bottom face of the pad electrode; and at least one harmonic circuit which is connected with the at least one connection metal and short-circuits a harmonic wave.SELECTED DRAWING: Figure 2
申请公布号 JP2016063360(A) 申请公布日期 2016.04.25
申请号 JP20140189196 申请日期 2014.09.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 SASAKI YOSHINOBU
分类号 H03F3/60 主分类号 H03F3/60
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