SUBSTRATE PROCESSING DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM

摘要

PROBLEM TO BE SOLVED: To provide a structure and method capable of keeping a temperature of a substrate placing table (a susceptor) constant, while absorbing heat reception of reaction heat generated by silicon etching even in a low-temperature region in the vicinity of an ambient temperature.SOLUTION: A substrate processing device comprises: a substrate placing table that has a heating element and a cooling flow channel; a heating element power supply for supplying power to the heating element; a heat detector whose tip end is arranged at a lower side than a top surface of the substrate placing table and at an upper side than a bottom end of the heating element; a cooling medium supply part that supplies cooling medium to the cooling flow channel; and a controller that controls the heating element power supply and the cooling medium supply part so as to supply first power to the heating element when no substrate is placed on the substrate placing table and to supply second power when a substrate is placed on the substrate placing table, while supplying the cooling medium to the cooling flow channel.SELECTED DRAWING: Figure 5