发明名称 SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor element which suppresses leakage current.SOLUTION: According to an embodiment, a semiconductor element including a semiconductor substrate, a semiconductor layer, a first insulation film and a first electrode is provided. The semiconductor layer is provided on the semiconductor substrate. The semiconductor layer has first through fifth regions. The first region has a first part and a second part adjacent to the fist part. The second region is provided on a surface of the first part. The third region is provided on the surface of the first part between the second part and the second region to separate the second part and the second region. The fourth region is provided on the surface of the first part between the second part and the third region to be adjacent to the second part and the third region. The fifth region is provided on a surface of the fourth region. The first electrode is provided on the semiconductor layer between the fifth region and the second part.SELECTED DRAWING: Figure 1
申请公布号 JP2016062927(A) 申请公布日期 2016.04.25
申请号 JP20140187114 申请日期 2014.09.12
申请人 TOSHIBA CORP 发明人 IWAZU YASUTOKU;INOHARA MASAHIRO
分类号 H01L29/861;H01L21/336;H01L21/76;H01L21/8234;H01L27/06;H01L29/06;H01L29/78;H01L29/868 主分类号 H01L29/861
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