发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit heat generation by a current detection circuit even when a large current is allowed to flow in a power transistor.SOLUTION: A semiconductor device 1 according to one embodiment comprises: a power transistor Tr1 and a sense transistor Tr2 which are connected in parallel with each other; an operational amplifier AMP1 with a non-inverted input terminal being connected to an emitter SE of the sense transistor Tr2 and with an inverted input terminal being connected to an emitter KE of the power transistor Tr1; a resistive element Rs with one end being connected to the emitter of the sense transistor Tr2 and with the other end being connected to a node N1; and a control transistor Tr3 provided between the node N1 and a power source Vss. The operational amplifier AMP1 controls a current carried by the control transistor Tr3 so as to make emitter voltage of the power transistor Tr1 and emitter voltage of the sense transistor Tr2 be substantially equivalent with each other.SELECTED DRAWING: Figure 1
申请公布号 JP2016063674(A) 申请公布日期 2016.04.25
申请号 JP20140190819 申请日期 2014.09.19
申请人 RENESAS ELECTRONICS CORP 发明人 KAERIYAMA JUNICHI
分类号 H02M1/00;H01L21/822;H01L27/04 主分类号 H02M1/00
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