| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing generation of kTC noise.SOLUTION: The semiconductor device of an embodiment includes a plurality of pixels arranged in a matrix. Each of the plurality of pixels includes a photoelectric conversion part, a first impurity diffusion region, a second impurity diffusion region, a potential barrier part, and a detection part. The first impurity diffusion region holds an electric charge photoelectrically converted by the photoelectric conversion part. A voltage supply line is connected to the second impurity diffusion region. The potential barrier part forms a fixed potential barrier between the first impurity diffusion region and the second impurity diffusion region to restrict movement of electric charges between the first impurity diffusion region and the second impurity diffusion region. The detection part detects the electric charge held in the first impurity diffusion region.SELECTED DRAWING: Figure 1 |
